rev1.0 1 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem product summary v (br)dss r ds(on) i d n-channel 20 24m 10a p-channel -20 43m -5.2a g1 d1 s1 d2 g2 s2 absolute maximum ratings (t c = 25 c unless otherwise noted) parameters/test conditions symbol n-channel p-channel units drain-source voltage v ds 20 -20 v gate-source voltage v gs 12 12 v continuous drain current t a = 25 c i d 10 -5.2 a t a = 70 c 6.3 -3.2 pulsed drain current 1 i dm 40 -21 power dissipation t a = 25 c p d 2.5 w t a = 70 c 1.6 junction & storage temperature range t j , t stg -55 to 150 c thermal resistance ratings thermal resistance symbol typical maximum units junction-to-ambient r ? ja 50 c / w 1 pulse width limited by maximum junction temperature. 2 duty cycle ? 1% g :gate d :drain s :source
rev1.0 2 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem electrical characteristics (t c = 25 c, unless otherwise noted) parameter symbol test conditions limits unit min typ max static drain-source breakdown voltage v (br)dss v gs = 0v, i d = 250 ? a n-ch p-ch 20 -20 v v gs = 0v, i d = -250 ? a gate threshold voltage v gs(th) v ds = v gs , i d = 250 ? a n-ch p-ch 0.4 -0.4 0.8 -0.8 1.2 -1.2 v ds = v gs , i d = -250 ? a gate-body leakage i gss v ds = 0v, v gs = 12v n-ch p-ch 100 100 na v ds = 0v, v gs = 12v zero gate voltage drain current i dss v ds = 16v, v gs = 0v n-ch p-ch 1 -1 ? a v ds = -16v, v gs = 0v v ds = 16v, v gs = 0v, t j = 55 c n-ch p-ch 10 -10 v ds = -16v, v gs = 0v, t j = 55 c drain-source on-state resistance 1 r ds(on) v gs = 2.5v, i d = 5.2a n-ch p-ch 28 47 36 68 m v gs = -2.5v, i d = -4a v gs = 4.5v, i d = 8a n-ch p-ch 18 32 24 43 v gs = -4.5v, i d = -5a dynamic input capacitance c iss n-channel v gs = 0v, v ds = 10v, f = 1mhz p-channel v gs = 0v, v ds = -10v, f = 1mhz n-ch p-ch 732 1110 pf output capacitance c oss n-ch p-ch 241 242 reverse transfer capacitance c rss n-ch p-ch 169 173 total gate charge 2 q g n-channel v ds = 10v, v gs = 4.5v, i d = 5a p-channel v ds = -10v, v gs = -4.5v, i d = -5a n-ch p-ch 10 11 nc gate-source charge 2 q gs n-ch p-ch 0.8 2 gate-drain charge 2 q gd n-ch p-ch 3.7 3.5
rev1.0 3 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem turn-on delay time 2 t d(on) n-channel v ds = 10v, i d ? 1a, v gs = 4.5v, r gen = 10 p-channel v ds = -4v, i d ? -1a, v gs = -4.5v, r gen = 10 n-ch p-ch 6 23 ns rise time 2 t r n-ch p-ch 5 45 turn-off delay time 2 t d(off) n-ch p-ch 16 45 fall time 2 t f n-ch p-ch 5 32 source-drain diode ratin gs and characteristics (t c = 25 c) continuous current i s n-ch p-ch 1.9 -1.9 a pulsed current 3 i sm n-ch p-ch 7.6 -9 forward voltage 1 v sd i f = 1a, v gs = 0v n-ch p-ch 1.3 -1.3 v i f = -1a, v gs = 0v 1 pulse test : pulse width ? 300 ? sec, duty cycle ? 2%. 2 independent of operating temperature. 3 pulse width limited by maximum junction temperature.
rev1.0 4 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem n-channel - 50 - 25 0 25 50 75 100 125 150 rdson x 0.6 t j - junction temperature(c) rdson x 0.8 rdson x 1.0 rdson x 1.2 rdson x 1.4 rdson x 1.6 rdson x 1.8 r ds(on) - on-resistance (normalized) on-resistance vs. junction temperature v gs =4.5v i d =8a
rev1.0 5 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem crss coss ciss f=1mhz v gs =0v c - capacitance(pf) capacitance 0 200 400 600 800 1000 024681012 v ds - drain-to-source voltage(v) maxmum safe operating area. dc 100ms 10ms 100 10 1 0.1 0.01 100 10 1 0.1 1ms v ds ,drain-source voltage(v) i d ,drain current(a) r ds(on) limit single pulse r ja =50 c/w t a =25 c
rev1.0 6 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem r ja (t) = r(t) * r j a dut y cycl e, d= t 1 / t 2 t j -t a =p*r ja (t) t2 t1 p(pk) transisent thermal response curve. t1 time(sec) r(t), normalized effective transient thermal resistance singl e pulse 0.01 0.02 0.05 0.1 0.2 d=0. 5 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 300 100 10 1 0.1 0.01 0.001 0.0001 0.001 r ja =50 c/w
rev1.0 7 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem p-channel - 50 - 25 0 25 50 75 100 125 150 rdson x 0.6 t j - junction temperature(c) rdson x 0.8 rdson x 1.0 rdson x 1.2 rdson x 1.4 rdson x 1.6 rdson x 1.8 r ds(on) - on-resistance (normalized) on-resistance vs. junction temperature v gs =-4.5v i d = - 4.3a
rev1.0 8 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem crss coss ciss f=1mhz v gs =0v c - capacitance(pf) capacitance 0 300 600 900 1200 1500 024681012 - v ds - drain-to-source voltage(v) maxmum safe operating area. -v ds ,drain-source voltage(v) -i d ,drain current(a) single pulse r ja =50 c/w ta=25 c dc 100ms 10ms limit r ds(on) 100 10 1 0.1 0.01 100 10 1 0.1 1ms
rev1.0 9 dec-17-2008 n- & p-channel enhancement mode field effect transistor P2402OV sop-8 halogen-free & lead-free niko-sem r ja (t) = r(t) * r j a duty cycl e, d= t 1 / t 2 t j -t a =p*r ja (t) t2 t1 p(pk) transisent thermal response curve. t1 time(sec) r(t), normalized effective transient thermal resistance si ngl e pul se 0.01 0.02 0.05 0.1 0.2 d=0. 5 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 300 100 10 1 0.1 0.01 0.001 0.0001 0.001 r ja =50 c/w
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